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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 21: Primary Algorithm-Specific Extended Query Table (Continued)
Note 1 applies to the entire table
Address
x16
46h
x8
8Ch
Data
0002h
Description
Erase suspend:
Value
2
00 = Not supported
01 = Read only
02 = Read and write
47h
8Eh
0001h
Block protection:
1
00 = Not supported
x = Number of blocks per group
48h
90h
0000h
Temporary block unprotect:
Not supported
00 = Not supported
01 = Supported
49h
92h
0008h
Block protect/unprotect:
8
08 = M29EWH/M29EWL
4Ah
94h
0000h
Simultaneous operations:
–
Not supported
4Bh
96h
0000h
Burst mode:
Not supported
00 = Not supported
01 = Supported
4Ch
98h
0003h
Page mode:
16-word page
00 = Not supported
01 = 8-word page
02 = 8-word page
03 = 16-word page
4Dh
9Ah
00B5h
V PPH supply minimum program/erase voltage:
11.5V
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
4Eh
9Ch
00C5h
V PPH supply maximum program/erase voltage:
12.5V
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
4Fh
9Eh
00xxh
Top/bottom boot block flag:
Uniform +
xx = 04h: Uniform device, HW protection for lowest block
xx = 05h: Uniform device, HW protection for highest block
V PP /WP# protect-
ing highest or
lowest block
50h
A0h
0001h
Program suspend:
Supported
00 = Not supported
01 = Supported
Note:
1. The values in this table are valid for both packages.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
52
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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